vishay siliconix si7456dp document number: 71603 s09-0271-rev. f, 16-feb-09 www.vishay.com 1 n-channel 100-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfets ? new low thermal resistance powerpak ? package with low 1.07 mm profile ? pwm optimized for fast switching ? 100 % r g tested applications ? primary side switch for high density dc/dc ? telecom/server 48 v, full-/half-bridge dc/dc ? industrial and 42 v automotive product summary v ds (v) r ds(on) ( )i d (a) 100 0.025 at v gs = 10 v 9.3 0.028 at v gs = 6.0 v 8.8 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view ordering information: SI7456DP-T1-E3 (lead (pb)-free) si7456dp-t1-ge3 (lead (pb)-free and halogen-free) n-channel mosfe t g d s notes: a. surface mounted on 1" x 1" fr4 board. b. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. c. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150c) a t a = 25 c i d 9.3 5.7 a t a = 85 c 6.7 4.1 pulsed drain current i dm 40 avalanche current l = 0.1 mh i as 30 single avalanche energy (duty cycle 1 %) e as 45 mj continuous source current (diode conduction) a i s 4.3 1.6 a maximum power dissipation a t a = 25 c p d 5.2 1.9 w t a = 85 c 2.7 1.0 operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) b,c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 19 24 c/w steady state 52 65 maximum junction-to-case steady state r thjc 1.5 1.8
www.vishay.com 2 document number: 71603 s09-0271-rev. f, 16-feb-09 vishay siliconix si7456dp notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 24v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 85 c 20 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 9.3 a 0.021 0.025 v gs = 6.0 v, i d = 8.8 a 0.023 0.028 forward transconductance a g fs v ds = 15 v, i d = 9.3 a 35 s diode forward voltage a v sd i s = 4.3 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g v ds = 50 v, v gs = 10 v, i d = 9.3 a 36 44 nc gate-source charge q gs 10 gate-drain charge q gd 8.6 gate resistance r g 0.5 1.27 2.1 tu r n - o n d e l ay t i m e t d(on) v dd = 50 v, r l = 50 i d ? 1.0 a, v gen = 10 v, r g = 6 20 40 ns rise time t r 10 20 turn-off delay time t d(off) 46 90 fall time t f 26 50 source-drain reverse recovery time t rr i f = 4.3 a, di/dt = 100 a/s 50 80 output characteristics 0 8 16 24 32 40 012345 v gs = 10 v thru 6 v 4 v v ds - drain-to-source voltage (v) i d - drain current (a) 5 v transfer characteristics 0 8 16 24 32 40 0123456 t c = 125 c - 55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 71603 s09-0271-rev. f, 16-feb-09 www.vishay.com 3 vishay siliconix si7456dp typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.00 0.01 0.02 0.03 0.04 0 8 16 24 32 40 i d - drain current (a) v gs = 10 v v gs = 6.0 r ds(on) - on-resistance ( ) 0 2 4 6 8 10 0 6 12 18 24 30 36 v ds = 50 v i d = 9.3 a v gs - gate-to-source voltage (v) q g - total gate charge (nc) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 40 10 1 v sd - - source-to-drain voltage (v) i s - source current (a) capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 500 1000 1500 2000 2500 3000 3500 0 102030405060 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 9.3 a t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0.00 0.02 0.04 0.06 0.08 0246810 i d = 9.3 a r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 71603 s09-0271-rev. f, 16-feb-09 vishay siliconix si7456dp typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71603 . threshold voltage i d = 250 a variance (v) v gs(th) t j - temperature (c) - 1.5 - 1.0 - 0.5 0.0 0.5 - 50 - 25 0 25 50 75 100 125 150 single pulse power 0 30 50 10 20 power (w) time (s) 1 600 10 40 0.1 0.01 100 normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 52 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective transient thermal impedance 0.001 0.01
package information www.vishay.com vishay siliconix revison: 20-may-13 1 document number: 71655 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8, (single/dual) millimeters inches dim. min. nom. max. min. nom. max. a 0.97 1.04 1.12 0.038 0.041 0.044 a1 - 0.05 0 - 0.002 b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.23 0.28 0.33 0.009 0.011 0.013 d 5.05 5.15 5.26 0.199 0.203 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.56 3.76 3.91 0.140 0.148 0.154 d3 1.32 1.50 1.68 0.052 0.059 0.066 d4 0.57 typ. 0.0225 typ. d5 3.98 typ. 0.157 typ. e 6.05 6.15 6.25 0.238 0.242 0.246 e1 5.79 5.89 5.99 0.228 0.232 0.236 e2 (for al product) 3.30 3.48 3.66 0.130 0.137 0.144 e2 (for other product) 3.48 3.66 3.84 0.137 0.144 0.151 e3 3.68 3.78 3.91 0.145 0.149 0.154 e4 (for al product) 0.58 typ. 0.023 typ. e4 (for other prod uct) 0.75 typ. 0.030 typ. e 1.27 bsc 0.050 bsc k (for al product) 1.45 typ. 0.057 typ. k (for other produc t) 1.27 typ. 0.050 typ. k1 0.56 - - 0.022 - - h 0.51 0.61 0.71 0.020 0.024 0.028 l 0.51 0.61 0.71 0.020 0.024 0.028 l1 0.06 0.13 0.20 0.002 0.005 0.008 ? 0 - 12 0 - 12 w 0.15 0.25 0.36 0.006 0.010 0.014 m 0.125 typ. 0.005 typ. ecn: c13-0702-rev. k, 20-may-13 dwg: 5881 3. dimensions exclusive of mold flash and cutting burrs. 1. notes 2 inch will govern. dimensions exclusive of mold gate burrs. backside view of single pad backside view of dual pad detail z d d1 d2 c a e1 d1 e2 d2 e b 1 2 3 4 h 4 3 2 1 1 2 3 4 b l d2 d3 (2x) z a1 k1 k d e w l1 d5 e3 d4 e4 e4 k l h e2 d4 d5 m e3 2 2
application note 826 vishay siliconix document number: 72599 www.vishay.com revision: 21-jan-08 15 application note recommended minimum pads for powerpak ? so-8 single 0.174 (4.42) recommended mi nimum pads dimensions in inches/(mm) 0.260 (6.61) 0.024 (0.61) 0.154 (3.91) 0.150 (3.81) 0.050 (1.27) 0.050 (1.27) 0.032 (0.82) 0.040 (1.02) 0.026 (0.66) return to index return to index
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